DRY-ETCHING OF VIA CONNECTIONS FOR INP POWER DEVICES

Authors
CONSTANTINE C BARRATT C PEARTON SJ REN F LOTHIAN JR HOBSON WS KATZ A YANG LW CHAO PC
Citation
C. Constantine et al., DRY-ETCHING OF VIA CONNECTIONS FOR INP POWER DEVICES, Electronics Letters, 29(11), 1993, pp. 984-986
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
11
Year of publication
1993
Pages
984 - 986
Database
ISI
SICI code
0013-5194(1993)29:11<984:DOVCFI>2.0.ZU;2-U
Abstract
Through-wafer vias fabricated in InP substrates using high-rate (great er-than-or-equal-to 1 mum min-1) dry etching in an electron cyclotron resonance (ECR) Cl2/CH4/H-2/Ar discharge at 150-degrees-C are reported . The low process pressure (approximately 2 mtorr) enables creation of small diameter (30 mum) vias using photoresist masks, and the anisotr opic profiles are suitable for Au plating to complete the electrical f ront-to-back connection.