NONDESTRUCTIVE MEASUREMENTS OF STOICHIOMETRY IN UNDOPED SEMIINSULATING GALLIUM-ARSENIDE BY X-RAY BOND METHOD

Authors
CHEN NF WANG YT HE HJ WANG ZG LIN LY ODA O
Citation
Nf. Chen et al., NONDESTRUCTIVE MEASUREMENTS OF STOICHIOMETRY IN UNDOPED SEMIINSULATING GALLIUM-ARSENIDE BY X-RAY BOND METHOD, Applied physics letters, 69(25), 1996, pp. 3890-3892
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
25
Year of publication
1996
Pages
3890 - 3892
Database
ISI
SICI code
0003-6951(1996)69:25<3890:NMOSIU>2.0.ZU;2-7
Abstract
The influences of microdefects and dislocations on the lattice paramet ers of undoped semi-insulating GaAs single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi-insulating GaAs was established in this letter. The comparison of this method with coulometric titration indicates that the method of n ondestructive measurements is indeed convenient and reliable. (C) 1996 American Institute of Physics.