OXYGEN GETTERING AND PRECIPITATION AT MEV SI-IMPLANTATION INDUCED DAMAGE IN SILICON( ION)

interaction of intrinsic oxygen in Czhochralski silicon with implantat ion damage induced by 2.0 MeV Si+ ions has been investigated as a func tion of annealing temperature and time. Four distinct regions of oxyge n localization are revealed by secondary ion mass spectrometry followi ng sample annealing. The different regions are correlated with either a near surface vacancy-rich region or the buried layer of extended def ects near the projected range. The relative concentration of oxygen in each region depends on the competition between oxygen gettering in ea ch region and out-diffusion to the surface. It has been established, u sing quasikinematical and dynamical contrast transmission electron mic roscopy imaging techniques, that the oxygen in regions containing exte nded dislocations is in the form of fine precipitates. The precipitate s decorate both the dislocations and, for faulted loops, the stacking fault planes. (C) 1996 American Institute of Physics.