SUBMICRON CRYSTALLOGRAPHY IN THE SCANNING ELECTRON-MICROSCOPE

Authors
Citation
Kz. Troost, SUBMICRON CRYSTALLOGRAPHY IN THE SCANNING ELECTRON-MICROSCOPE, Philips journal of research, 47(3-5), 1993, pp. 151-162
Citations number
6
Categorie Soggetti
Engineering
Journal title
ISSN journal
01655817
Volume
47
Issue
3-5
Year of publication
1993
Pages
151 - 162
Database
ISI
SICI code
0165-5817(1993)47:3-5<151:SCITSE>2.0.ZU;2-F
Abstract
The technique of electron backscattering patterns, also called backsca tter Kikuchi diffraction, for local crystallography in the scanning el ectron microscope is briefly introduced. Four examples of applications are presented: (i) phase analysis of a glass ceramic; (ii) texture an alysis of a PbZr0.53Ti0.47O3 layer on Si(100)/SiO2/Ti/Pt; (iii) strain analysis of an Si0.66Ge0.34 layer on Si(100) and (iv) damage analysis of Si(100) implanted with 70 keV Ge ions. It is concluded that electr on backscattering patterns provide various types of crystallographic i nformation, in principle on a submicron lateral scale, while retaining the specific advantages of scanning electron microscopy: little or no sample preparation and the possibility of linking diffraction informa tion with morphological and compositional information also obtainable in the scanning electron microscope.