TEM AND XRD CHARACTERIZATION OF EPITAXIALLY GROWN PBTIO3 PREPARED BY PULSED-LASER DEPOSITION

Authors
DEVEIRMAN AEM TIMMERS J HAKKENS FJG CILLESSEN JFM WOLF RM
Citation
Aem. Deveirman et al., TEM AND XRD CHARACTERIZATION OF EPITAXIALLY GROWN PBTIO3 PREPARED BY PULSED-LASER DEPOSITION, Philips journal of research, 47(3-5), 1993, pp. 185-201
Citations number
13
Categorie Soggetti
Engineering
Journal title
Philips journal of research → ACNP
ISSN journal
01655817
Volume
47
Issue
3-5
Year of publication
1993
Pages
185 - 201
Database
ISI
SICI code
0165-5817(1993)47:3-5<185:TAXCOE>2.0.ZU;2-A
Abstract
Thin epitaxial films of PbTiO3 were grown by pulsed laser deposition o n different oxidic substrates (LaAlO3, SrTiO3, BaZrO3/SrTiO3, La0.5Sr0 .5CoO3/MgO, MgO, MgAl2O4). With transmission electron microscopy and X -ray diffraction the lattice distortion, preferred c- or a-orientation and the morphology of the PbTiO3 film have been studied.