NONDESTRUCTIVE ANALYSIS BY SPECTROSCOPIC ELLIPSOMETRY

A concise review on the basic principles and methodology used in spect roscopic ellipsometry analysis is presented. The technique is truly no n-destructive and allows optical and structural parameters to be acces sed in a wide range of problems in materials research. Several recent examples are presented. These include the structural analysis of high- dose oxygen-implanted silicon substrates, the determination of the opt ical constants of thin ZnSe films on c-GaAs grown by molecular beam ep itaxy and the determination of the Ge content in Si1-xGex alloy films on c-Si grown by chemical vapour deposition.