METAL-SEMICONDUCTOR TRANSITION ALONG THICKNESS IN AN AMORPHOUS SB LAYER

Authors
KUZMENKO VM VLADYCHKIN AN NAVOZENKO YV
Citation
Vm. Kuzmenko et al., METAL-SEMICONDUCTOR TRANSITION ALONG THICKNESS IN AN AMORPHOUS SB LAYER, JETP letters, 57(10), 1993, pp. 658-661
Citations number
9
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
57
Issue
10
Year of publication
1993
Pages
658 - 661
Database
ISI
SICI code
0021-3640(1993)57:10<658:MTATIA>2.0.ZU;2-C
Abstract
A metallic state has been produced in a layer of amorphous antimony ap proximately 20 nm thick by depositing Sb on an amorphous Bi layer. Wit h a further increase in thickness, the Sb condensate forms in the ordi nary semiconducting state. The difference between the conductivities o f these two states of the amorphous antimony is approximately six orde rs of magnitude (at T=20 K).