HIGH-FIELD MAGNETORESISTANCE OF ZR-N FILM THERMOMETERS

Authors
YOSHIZAWA M KITAGAWA Y SUGAWARA H YOTSUYA T YOSHITAKE M TOYOTA N
Citation
M. Yoshizawa et al., HIGH-FIELD MAGNETORESISTANCE OF ZR-N FILM THERMOMETERS, Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy, 38(2), 1993, pp. 312-321
Citations number
26
Categorie Soggetti
Material Science","Metallurgy & Mining
Journal title
Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry, and Metallurgy → ACNP
ISSN journal
00408808
Volume
38
Issue
2
Year of publication
1993
Pages
312 - 321
Database
ISI
SICI code
0040-8808(1993)38:2<312:HMOZFT>2.0.ZU;2-4
Abstract
Recent results on the magnetoresistance (MR) of Zr-N film thermometers have been reported. Zr-N films are classified into two groups by the resistance ratio RR. The samples with small RR show three-dimensional localization effects, and their MR can be explained based on the local ization theory. The samples with large RR show an insulating behavior as a function of temperature, and a characteristic linear negative MR is seen below 1.5T. The origin of MR for insulating samples is conside red in the frame of recent theories for variable-range-hopping conduct ion.