RADIATION SWELLING AND SPUTTERING OF CDXHG1-XTE AS A RESULT OF LARGE-DOSE ION-IMPLANTATION

Authors
IBRAGIMOVA MI PETUKHOV VY KHAIBULLIN IB
Citation
Mi. Ibragimova et al., RADIATION SWELLING AND SPUTTERING OF CDXHG1-XTE AS A RESULT OF LARGE-DOSE ION-IMPLANTATION, Semiconductors, 27(4), 1993, pp. 311-314
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
4
Year of publication
1993
Pages
311 - 314
Database
ISI
SICI code
1063-7826(1993)27:4<311:RSASOC>2.0.ZU;2-6
Abstract
The effect of ion bombardment on the change in the surface-layer volum e and on the microrelief of the surface of CdxHg1-xTe as a function of the method and conditions during implantation has been studied. These changes are explained by taking two factors into account: vacancy rad iation-stimulated swelling and sputtering. The chemical nature of the bombarding ions was found to affect the geometric dimensions and the d ensity of irregularities on the surface of CdxHg1-xTe. The projections and depressions formed in the course of implantation of ions in CdxHg 1-xTe increased considerably (tens of times) the sputtering coefficien t.