FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS

Authors
ANDREEV BA GOLUBEV VG EMTSEV VV KROPOTOV GI OGANESYAN GA SCHMALZ K
Citation
Ba. Andreev et al., FORMATION OF NEW DONORS AS A RESULT OF HEAT-TREATMENT OF SILICON WITHDIFFERENT OXYGEN CONCENTRATIONS, Semiconductors, 27(4), 1993, pp. 315-323
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
4
Year of publication
1993
Pages
315 - 323
Database
ISI
SICI code
1063-7826(1993)27:4<315:FONDAA>2.0.ZU;2-4
Abstract
The formation of ''new'' donors in silicon with different oxygen conce ntrations at a temperature T=600-degrees-C has been analyzed. It was f ound that the energy spectrum of new donors is a composite spectrum wh ose components have been determined. A study of new donors revealed th at the thermal stability of the ''classical'' double thermal donors fo rmed at T=450-degrees-C is much higher than that assumed in the curren t literature. The formation of new donors depended strongly on the int ital oxygen concentration.