LAYER-BY-LAYER INVESTIGATION OF ION-IMPLANTED SILICON BY METHODS OF ELLIPSOMETRY AND SELECTIVE WETTING

The methods of multibeam elliposometry (at the wavelength of 632.8 nm) and selective wetting were used to find the profile of changes in the refractive index, extinction coefficient, and wetting angle of the su rface in the course of layer-by-layer removal of silicon implanted wit h Ar-40+ ions (in a dose of 10(15) cm-2) and P-31+ ions (10(16) cm-2) with an energy of 40 keV. The changes in the absorption coefficient an d in the wetting angle with depth in an implanted sample are attribute d to changes in the distribution of defects. The profile of changes in the refractive index is attributed to the combined influence of defec ts and of the implanted impurity.