ELECTRON MINIBANDS IN (GAAS)N(ALAS)M SUPERLATTICES WITH EVEN AND ODD-M

Authors
ALEINER IL IVCHENKO EL
Citation
Il. Aleiner et El. Ivchenko, ELECTRON MINIBANDS IN (GAAS)N(ALAS)M SUPERLATTICES WITH EVEN AND ODD-M, Semiconductors, 27(4), 1993, pp. 330-332
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
4
Year of publication
1993
Pages
330 - 332
Database
ISI
SICI code
1063-7826(1993)27:4<330:EMI(SW>2.0.ZU;2-A
Abstract
An analysis is made of the boundary conditions for the envelopes in th e effective mass method, applied to heterojunctions in a GaAs/AlAs sup erlattice. These conditions make it possible to find the dependence of the effect of GAMMAX mixing on the parity of the number of monomolecu lar layers in an AlAs layer. The dispersion of electrons in the two lo west minibands is found near a transition for a type-I to a type-II su perlattice.