RADIATION RECOMBINATION IN TYPE-II N-GAINASSB N-GASB HETEROJUNCTIONS/

Authors
BRESLER MS GUSEV OB TITKOV AN CHEBAN VN YAKOVLEV YP HULICIUS E OSWALD J PANGRAC J SIMECEK T
Citation
Ms. Bresler et al., RADIATION RECOMBINATION IN TYPE-II N-GAINASSB N-GASB HETEROJUNCTIONS/, Semiconductors, 27(4), 1993, pp. 341-345
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
4
Year of publication
1993
Pages
341 - 345
Database
ISI
SICI code
1063-7826(1993)27:4<341:RRITNN>2.0.ZU;2-V
Abstract
Photoluminescence spectra were measured for type-II heterostructures n -Ga0.89In0.11As0.1Sb0.9/N-GaSb. It was found that an effective radiati ve recombination channel at the interface exists. The occurrence of th is channel is due to a localization of nonequilibrium holes at the nat ive deep acceptors in GaSb situated in the region of band-bending pote ntial at the boundary. The explanation of the recombination transition s is based on the calculations of the energy-band diagram for the hete rojunction under study.