INFLUENCE OF MOBILE DEFECTS ON THE CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT IN THE CASE OF CDS CRYSTALS

Authors
DROZDOVA IA EMBERGENOV B KORSUNSKAYA NE MARKEVICH IV
Citation
Ia. Drozdova et al., INFLUENCE OF MOBILE DEFECTS ON THE CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT IN THE CASE OF CDS CRYSTALS, Semiconductors, 27(4), 1993, pp. 372-373
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
4
Year of publication
1993
Pages
372 - 373
Database
ISI
SICI code
1063-7826(1993)27:4<372:IOMDOT>2.0.ZU;2-R
Abstract
Characteristics of electrical contacts with CdS crystals containing mo bile defects were found to change with time. An ohmic contact deterior ates while the resistance of a nonohmic (rectifying) contact and the p hoto-emf across the latter fall due to the drift of mobile defects in the field of either an accumulation- or depletion-type band bending cr eated by the contact electrode.