THE EFFECT OF IONIC MOVEMENT ON TSL IN TLD LIF-MG,TI

TSL properties of the DTG-4 LiF-Mg,Ti dependent on the annealing treat ments in the temperature region 350-500 K are examined by the fraction al glow technique and by the decay of the optical absorption spectra. Association - dissociation reactions involving Mg-V(c) dipoles and ani on vacancies are discussed. Increased observed values of the mean TSL activation energies and the mean frequency factors, the latter suffici ently exceeding the optical phonon frequency, are explained as arising from the change of the concentration of the moving defects with tempe rature. These moving defects perturb the electronic traps and lower th e activation energy of electron release in approaching the trap. The o rigin of the moving ionic defects is considered.