A NOVEL POST-HYDROGENATION PROCESS FOR CHEMICAL-VAPOR-DEPOSITED A-SI THIN-FILM TRANSISTORS

Authors
SUGIURA O SHIRAIWA T MATSUMURA M
Citation
O. Sugiura et al., A NOVEL POST-HYDROGENATION PROCESS FOR CHEMICAL-VAPOR-DEPOSITED A-SI THIN-FILM TRANSISTORS, JPN J A P 2, 32(7B), 1993, pp. 120000981-120000983
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
32
Issue
7B
Year of publication
1993
Pages
120000981 - 120000983
Database
ISI
SICI code
Abstract
A novel post-hydrogenation method for chemical-vapor-deposited amorpho us-silicon (CVD a-Si) thin-film transistors (TFTs) has been proposed. Samples were annealed in the presence of the atomic hydrogen generated by a hot tungsten filament. The dependence of the amount of adsorbed hydrogen on annealing period, filament temperature and total gas press ure was described. A-Si TFTs which were post-hydrogenated by means of the hot-filament method showed an electron mobility of 1.1 cm2/V . s. The lifetime and diffusion length of atomic hydrogen were estimated.