K. Ishikura et al., LOW-CARBON INCORPORATION IN METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS USING DIMETHYLAMINE GALLANE, JPN J A P 2, 32(7B), 1993, pp. 120001014-120001016
Dimethylamine gallane (DMAG) was demonstrated to be a promising precur
sor as a gallium source for metalorganic moleculor beam epitaxy (MOMBE
) of GaAs with a low level of carbon incorporaticn. Epitaxial layers o
f GaAs were obtained at substrate temperatures above 250-degrees-C, an
d the hole concentration decreased with increasing substrate temperatu
re. For the GaAs layer grown at 500-degrees-C, the hole concentration
and Hall mobility were 1.2 x 10(15) cm-3 and 371 cm2/(V.s), respective
ly. Low temperature (4.2 K) photoluminescence indicated that the band-
to-carbon transition was negligibly small compared with the donor boun
d exciton peak.