LOW-CARBON INCORPORATION IN METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS USING DIMETHYLAMINE GALLANE

Dimethylamine gallane (DMAG) was demonstrated to be a promising precur sor as a gallium source for metalorganic moleculor beam epitaxy (MOMBE ) of GaAs with a low level of carbon incorporaticn. Epitaxial layers o f GaAs were obtained at substrate temperatures above 250-degrees-C, an d the hole concentration decreased with increasing substrate temperatu re. For the GaAs layer grown at 500-degrees-C, the hole concentration and Hall mobility were 1.2 x 10(15) cm-3 and 371 cm2/(V.s), respective ly. Low temperature (4.2 K) photoluminescence indicated that the band- to-carbon transition was negligibly small compared with the donor boun d exciton peak.