CHARACTERISTICS OF HETEROJUNCTION DIODE OF C-60 TETRATIAFULVALENE(TTF)/

Authors
YAMASHITA Y TAKASHIMA W KANETO K
Citation
Y. Yamashita et al., CHARACTERISTICS OF HETEROJUNCTION DIODE OF C-60 TETRATIAFULVALENE(TTF)/, JPN J A P 2, 32(7B), 1993, pp. 120001017-120001020
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
32
Issue
7B
Year of publication
1993
Pages
120001017 - 120001020
Database
ISI
SICI code
Abstract
The characteristics of a heterojunction diode consisting of C60/tetrat iafulvalene(TTF) which are typical of a photoinduced rectifier, are re ported. The device under dark conditions is almost insulative, however , upon light illumination, marked rectification is observed. The forwa rd bias to C60 under illumination is positive against the TTF electrod e. The results are discussed in terms of the photoinduced electron tra nsfer from TTF to C60 at the junction.