MODIFICATION OF SILICON SURFACE USING ATOMIC-FORCE MICROSCOPE WITH CONDUCTING PROBE

Authors
YASUTAKE M EJIRI Y HATTORI T
Citation
M. Yasutake et al., MODIFICATION OF SILICON SURFACE USING ATOMIC-FORCE MICROSCOPE WITH CONDUCTING PROBE, JPN J A P 2, 32(7B), 1993, pp. 120001021-120001023
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
32
Issue
7B
Year of publication
1993
Pages
120001021 - 120001023
Database
ISI
SICI code
Abstract
It is demonstrated that nearly atomically flat Si(100) surfaces passiv ated with native oxides can be modified by applying a negative potenti al to the conducting probe of an atomic force microscope (AFM) with re spect to the silicon substrate. It was verified from the detection of O(KLL) Auger electrons and Si(LVV) Auger electrons excited by the elec tron beam that silicon surfaces are modified by the oxidation of silic on. This oxidation is enhanced by an electric field.