STUDY OF PHASES FORMED DURING PRODUCTION OF COPPER INDIUM DISELENIDE BY REACTING COPPER, INDIUM AND SELENIUM LAYERS

CuInSe2 films were grown by reacting stacked layers of Cu, In and Se i n an atmosphere of Se vapor. Incremental growth of the various phases was followed at different temperatures until a single phase CuInSe2 fi lm Was formed. Conventional X-ray diffraction was used in identifying the different phases formed. Along with the knowledge of different pha ses formed at increasing reaction temperatures, it was concluded that CuInSe2 is formed at temperatures as low as 235-degrees-C, although a single phase film is obtained only at higher temperatures (almost-equa l-to 350-degrees-C).