SURFACE-BARRIER DETECTORS BASED ON N-TYPE HIGH-RESISTANCE SILICON PREPARED BY THE PHOTONUCLEAR TRANSMUTATION ALLOYING

Authors
ZABLOTSKII VV IVANOV NA LEONOV NN MOROZOV VF PETRENKO VV
Citation
Vv. Zablotskii et al., SURFACE-BARRIER DETECTORS BASED ON N-TYPE HIGH-RESISTANCE SILICON PREPARED BY THE PHOTONUCLEAR TRANSMUTATION ALLOYING, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 28-31
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
19
Issue
9
Year of publication
1993
Pages
28 - 31
Database
ISI
SICI code
0320-0116(1993)19:9<28:SDBONH>2.0.ZU;2-U