STRAIN EFFECT ON THE OPTICAL NONLINEARITY IN AN INGAAS GAAS ASYMMETRIC FABRY-PEROT MODULATOR/

The effect of strain on the optical nonlinearities and operation of an all-optical asymmetric Fabry-Perot etalon is investigated. A high ref lectivity modulation of 60% is reported with a contrast ratio of 12.2: 1 and insertion loss of 1.87 dB. High contrast is achieved through abs orption matching requiring a thick active layer. The effect of a thick structure on the strain reduced saturation carrier density is measure d. The saturation density is calculated to be a factor of 2.5 less tha n in a similar GaAs modulator, showing thicker strained devices still display the advantages of thinner structures.