DESIGN AND FABRICATION OF ASYMMETRIC STRAINED-LAYER MIRRORS FOR OPTOELECTRONIC APPLICATIONS

Citation
Jc. Bean et al., DESIGN AND FABRICATION OF ASYMMETRIC STRAINED-LAYER MIRRORS FOR OPTOELECTRONIC APPLICATIONS, Applied physics letters, 63(4), 1993, pp. 444-446
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
4
Year of publication
1993
Pages
444 - 446
Database
ISI
SICI code
0003-6951(1993)63:4<444:DAFOAS>2.0.ZU;2-V
Abstract
The design of thin-film mirrors is optimized for strained layer materi als systems. It is shown that the use of asymmetric structures produce s only minor loss in reflectivity per mirror period, while greatly ext ending the number of periods that can be grown in a defect-free mode. As applied to the GexSi1-x/Si strained layer system, the net result is an enhancement of reflectivity, with 1.3 mum mirrors achieving peak v alues near 75%. The approach is applicable to other materials systems and should yield even higher reflectivities in situations where wider ranges in index of refraction are available.