HIGH-CONTRAST ASYMMETRIC FABRY-PEROT ELECTROABSORPTION MODULATOR WITHZERO PHASE-CHANGE

By analyzing the exciton line shapes of quantum wells, we can determin e the wavelengths and biases at which they exhibit large absorption ch anges and zero refractive index changes relative to zero bias. To use this effect, we placed GaAs/AlGaAs quantum wells in the intrinsic regi on of a reverse-biased p-i-n diode asymmetric Fabry-Perot modulator. W e then developed a sample that could be post-growth processed to optim ize all relevant parameters. We used computer simulation to determine the exact post-growth correction required and produced reflection modu lators with 90% reflection change and zero relative phase change.