Semiconductor crystal miscut angles may be determined with high precis
ion by a new method, based on the measurement of the Bragg angle shift
for a highly asymmetric reflection. X-ray diffraction on a cleaved we
dge has the particularity that the asymmetry is different for the clea
vage plane and for the surface whose miscut angle is to be determined.
Therefore, a rocking curve gives rise to two diffraction peaks. The a
ngular difference between the two peaks is very sensitive to the miscu
t angle for high asymmetry of the reflection relative to the measured
surface.