ACCURATE MONOCRYSTAL MISCUT ANGLE DETERMINATION BY X-RAY-DIFFRACTION ON A WEDGE

Semiconductor crystal miscut angles may be determined with high precis ion by a new method, based on the measurement of the Bragg angle shift for a highly asymmetric reflection. X-ray diffraction on a cleaved we dge has the particularity that the asymmetry is different for the clea vage plane and for the surface whose miscut angle is to be determined. Therefore, a rocking curve gives rise to two diffraction peaks. The a ngular difference between the two peaks is very sensitive to the miscu t angle for high asymmetry of the reflection relative to the measured surface.