Pb(Zr1-xTix) O3 thin films covering the whole compositional range x =
0 to x = 1 have been grown for the first time on the sapphire (1102BAR
) plane using the metalorganic chemical vapor deposition technique. Th
e films are three-dimensionally epitaxial and exhibit single crystal p
roperties. The structural transitions, examined by x-ray diffraction,
are shifted slightly from the bulk single crystal values. Ferroelectri
c P-E hysteresis curves and the dielectric constant of the films were
investigated using interdigitated electrodes fabricated by photolithog
raphy.