EPITAXIAL LEAD-ZIRCONATE-TITANATE THIN-FILMS ON SAPPHIRE

Citation
W. Braun et al., EPITAXIAL LEAD-ZIRCONATE-TITANATE THIN-FILMS ON SAPPHIRE, Applied physics letters, 63(4), 1993, pp. 467-469
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
4
Year of publication
1993
Pages
467 - 469
Database
ISI
SICI code
0003-6951(1993)63:4<467:ELTOS>2.0.ZU;2-L
Abstract
Pb(Zr1-xTix) O3 thin films covering the whole compositional range x = 0 to x = 1 have been grown for the first time on the sapphire (1102BAR ) plane using the metalorganic chemical vapor deposition technique. Th e films are three-dimensionally epitaxial and exhibit single crystal p roperties. The structural transitions, examined by x-ray diffraction, are shifted slightly from the bulk single crystal values. Ferroelectri c P-E hysteresis curves and the dielectric constant of the films were investigated using interdigitated electrodes fabricated by photolithog raphy.