ELECTROLUMINESCENCE AT ROOM-TEMPERATURE OF A SINGEM STRAINED-LAYER SUPERLATTICE

Authors
ENGVALL J OLAJOS J GRIMMEISS HG PRESTING H KIBBEL H KASPER E
Citation
J. Engvall et al., ELECTROLUMINESCENCE AT ROOM-TEMPERATURE OF A SINGEM STRAINED-LAYER SUPERLATTICE, Applied physics letters, 63(4), 1993, pp. 491-493
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
4
Year of publication
1993
Pages
491 - 493
Database
ISI
SICI code
0003-6951(1993)63:4<491:EAROAS>2.0.ZU;2-6
Abstract
We report for the first time on room temperature electroluminescence i n the region 1.3-1.7 mum from a strain-adjusted Si6Ge4 superlattice. T hese results, together with photoluminescence, short-circuit photocurr ent spectroscopy, and voltage-intensity and current-intensity measurem ents indicate that the observed electroluminescence consists of two em ission bands which are believed to be caused by defect and interband r ecombination processes.