We report for the first time on room temperature electroluminescence i
n the region 1.3-1.7 mum from a strain-adjusted Si6Ge4 superlattice. T
hese results, together with photoluminescence, short-circuit photocurr
ent spectroscopy, and voltage-intensity and current-intensity measurem
ents indicate that the observed electroluminescence consists of two em
ission bands which are believed to be caused by defect and interband r
ecombination processes.