OPTICAL-PROPERTIES OF SI SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES/

Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescenc e and photoreflectance at temperatures between 4 and 20 K. It was foun d that, in addition to a low-energy broadband emission at around 0.8 e V and other features normally observable in photoluminescence measurem ents, fabrication process induced strain relaxation and enhanced elect ron-hole droplets emission together with a new feature at 1. 131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces.