SIMULTANEOUS SYNTHESIS OF WELL-SEPARATED BURIED AND SURFACE SILICIDESUSING A SINGLE-ION IMPLANTATION STEP

An unusual Ni distribution with two completely separated buried and su rface silicide layers has been observed after Ni ion implantation in S i( 111) kept at a temperature of 300-degrees-C, with a dose of 1. 1 X 10(17)/CM2 and at a fixed energy of 90 keV. RBS/channeling, AES, and c ross-sectional TEM have been used to study this phenomenon as a functi on of the substrate temperature and Co co-implantation. A model is pre sented, based on the diffusion of the transition metal, the defect ann ealing during the implantation, and the gettering power of the surface and the end of range defects.