TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON - COMMENT

Authors
ROSENBAUER M FUCHS H STUTZMANN M
Citation
M. Rosenbauer et al., TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON - COMMENT, Applied physics letters, 63(4), 1993, pp. 565-566
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
4
Year of publication
1993
Pages
565 - 566
Database
ISI
SICI code
0003-6951(1993)63:4<565:TOTRLI>2.0.ZU;2-Z