ELECTRONIC-STRUCTURE OF POLYDITHIENO[3,4-B,3',4'-D]THIOPHENE - A SMALL BANDGAP CONJUGATED POLYMER

Citation
C. Quattrocchi et al., ELECTRONIC-STRUCTURE OF POLYDITHIENO[3,4-B,3',4'-D]THIOPHENE - A SMALL BANDGAP CONJUGATED POLYMER, Synthetic metals, 57(2-3), 1993, pp. 4399-4404
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Mining
Journal title
ISSN journal
03796779
Volume
57
Issue
2-3
Year of publication
1993
Pages
4399 - 4404
Database
ISI
SICI code
0379-6779(1993)57:2-3<4399:EOP-AS>2.0.ZU;2-4
Abstract
We use a quantum chemical approach to investigate the chemical and ele ctronic structure of polydithieno[3,4-b;3',4'-d]thiophene (PDTT'), for which the monomer unit possesses four potential linking sites on alph a carbon positions. Semiempirical Austin Model 1 (AM1) calculations ar e performed on oligomer systems, considering different types of connec tion between the DTT' units, to determine the most favorable chain con formation and the relative stabilities of the oligomer segments. The e lectronic properties of the corresponding polymers are calculated with the Valence Effective Hamiltonian (VEH) method and compared to the re sults of optical spectroscopy.