QUARTER-MICROMETER SURFACE AND BURIED-CHANNEL PMOSFET MODELING FOR CIRCUIT SIMULATION

The modelling of PMOSFETs, with surface channels (SC) and buried chann els (BC) down to deep quarter-micrometre, in BSIM (Berkeley short-chan nel IGFET model) is discussed for analogue/digital circuit simulation. Based on physical mobility, velocity saturation, threshold voltage an d series drain/source resistance models with some special consideratio ns for PMOSFETs, a unified I-V model describes the electrical characte ristics of both NMOSFET and PMOSFETs, with surface channel and buried channel types. Because the model includes the major physical effects i n state-of-the-art MOSFETs and contains many important process and geo metry parameters, it can fit the measured data well and has a good sca lability for both SC and BC PMOSFETs.