ON THE DOPING OF ISOTOPICALLY CONTROLLED GERMANIUM BY NUCLEAR-TRANSMUTATION WITH A HIGH-CONCENTRATION OF SHALLOW DONOR IMPURITIES

Citation
I. Shlimak et al., ON THE DOPING OF ISOTOPICALLY CONTROLLED GERMANIUM BY NUCLEAR-TRANSMUTATION WITH A HIGH-CONCENTRATION OF SHALLOW DONOR IMPURITIES, Semiconductor science and technology, 11(12), 1996, pp. 1826-1829
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
11
Issue
12
Year of publication
1996
Pages
1826 - 1829
Database
ISI
SICI code
0268-1242(1996)11:12<1826:OTDOIC>2.0.ZU;2-2
Abstract
Experimental results are presented of the neutron transmutation doping (NTD) of isotopically controlled Ge-74 crystals, irradiated with a hi gh dose of neutron flux Phi (up to 4 x 10(19) cm(-2)). A series of hea vily doped samples of n-Ge:As with small compensation ratio K = N-A/N- D was obtained, Two novel effects connected with high neutron dose Phi have been observed: (i) the dependence of the free electron concentra tion n = N-D - N-A on Phi, linear at small n, saturates at n > 3 x 10( 17) cm(-3); (ii) if the NTD procedure is applied to samples previously highly doped by As, the final value of n even decreases (a 'negative doping'). These effects are explained by the enhancement of the format ion of complexes of an As impurity with radiation damage at high Phi, which leads to a decrease of n.