AN INVESTIGATION OF THE MULTICARRIER TRANSPORT-PROPERTIES OF DELTA-DOPED INSB AT HIGH-TEMPERATURES USING A MOBILITY SPECTRUM TECHNIQUE

Transport properties of Si-delta-doped InSb grown by molecular beam ep itaxy are studied. The mobility spectrum (MS) analysis made over a wid e temperature range reveals three species of carriers: those associate d with the bulk of the film, and electrons in quantized subbands in th e delta-layer. At low temperatures the MS data are consistent with sel f-consistent calculations and measurements of the Shubnikov-de Haas os cillations. The far-infrared cyclotron resonance lineshapes are well d escribed by the Drude approximation using the obtained values of subba nd mobilities, concentrations and effective masses.