FABRICATION AND OPTICAL-PROPERTIES OF ZNCDSE ZNSE SINGLE QUANTUM-WELLS ON GAAS(110) SURFACES CLEAVED IN UHV BY MOLECULAR-BEAM EPITAXY/

Authors
KO HC PARK DC KAWAKAMI Y FUJITA S FUJITA S
Citation
Hc. Ko et al., FABRICATION AND OPTICAL-PROPERTIES OF ZNCDSE ZNSE SINGLE QUANTUM-WELLS ON GAAS(110) SURFACES CLEAVED IN UHV BY MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 11(12), 1996, pp. 1873-1877
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
12
Year of publication
1996
Pages
1873 - 1877
Database
ISI
SICI code
0268-1242(1996)11:12<1873:FAOOZZ>2.0.ZU;2-X
Abstract
High-quality Zn0.85Cd0.15Se/ZnSe single quantum wells (SQWs) have been fabricated on GaAs(110) crystal surfaces which were obtained by cleav ing GaAs(100) wafers in ultra high vacuum (UHV). The growth interrupti on was found to prevent the growth of high-quality quantum well struct ures. The (110)-oriented SQWs grown under appropriate conditions show a very sharp photoluminescence spectrum whose full width at half-maxim um (FWHM) is as small as 4.9 meV. The sample showed a strong in-plane polarization angle dependence of the emission intensity, due to the co mpressive strain in the well layer. The ratio of maximum to minimum va lues of the polarized PL intensity was 1.6.