ENERGY-DISTRIBUTION OF AR IONS AT THE SUBSTRATE IN THE SPUTTERING DEPOSITION OF A-SIH FILMS

A calculation of the energy distribution of Ar ion striking the substr ate during the sputtered amorphous silicon thin films deposition is pr esented. The calculation model is based on the ion-neutral symmetrical collision with charge exchange in the substrate sheath region. The in fluence of the radio frequency power and gas pressure on the energy di stribution is reported, where the results indicate that they alter bot h the energy and the flux of Ar ions at the substrate.