INFLUENCE OF CRYSTALLIZATION ON ELECTRICAL AND OPTICAL-PROPERTIES OF TE-SE-SN AND TE-SE-SN-O FILMS

Authors
GEORGIEVA I NESHEVA D DIMITROV D KOZHUKHAROV V
Citation
I. Georgieva et al., INFLUENCE OF CRYSTALLIZATION ON ELECTRICAL AND OPTICAL-PROPERTIES OF TE-SE-SN AND TE-SE-SN-O FILMS, Journal of non-crystalline solids, 160(1-2), 1993, pp. 105-110
Citations number
12
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
160
Issue
1-2
Year of publication
1993
Pages
105 - 110
Database
ISI
SICI code
0022-3093(1993)160:1-2<105:IOCOEA>2.0.ZU;2-C
Abstract
Electrical, photoelectrical and optical properties of polycrystalline Te-Se-Sn and amorphous Te-Se-Sn-0 films, evaporated by laser beam, are investigated. The temperature dependences of the dark conductivity an d crystallization temperatures, 360-365 K, are measured. Changes in th e photoconductivity, optical band gap and reflection were observed and attributed to the crystallization processes. These results are discus sed in terms of existing ideas for amorphous semiconductors.