PHONON REPLICA IN THE IV CHARACTERISTICS OF A GAAS ALGAAS DOUBLE-BARRIER STRUCTURE/

Authors
ZOU NZ RAMMER J CHAO KA
Citation
Nz. Zou et al., PHONON REPLICA IN THE IV CHARACTERISTICS OF A GAAS ALGAAS DOUBLE-BARRIER STRUCTURE/, International journal of modern physics b, 7(19), 1993, pp. 3449-3460
Citations number
41
Categorie Soggetti
Physics, Condensed Matter","Physycs, Mathematical","Physics, Applied
Journal title
International journal of modern physics b → ACNP
ISSN journal
02179792
Volume
7
Issue
19
Year of publication
1993
Pages
3449 - 3460
Database
ISI
SICI code
0217-9792(1993)7:19<3449:PRITIC>2.0.ZU;2-2
Abstract
We have performed a detailed calculation of the I-V characteristic of a GaAs/AlxGa1-xAs double barrier structure, with special emphasis on t he phonon replica. For commonly used experimental samples (x congruent -to 0.3-0.4), the interface-like phonon modes produced by alloying and localized in barriers near the interfaces give the dominating contrib ution to the phonon replica. Our calculated I-V curves for samples of both symmetric and asymmetric barriers with or without bistability agr ee extremely well with experimental observations.