AUGER-ELECTRON SPECTROSCOPY AND PRINCIPAL COMPONENT ANALYSIS OF THE 1ST STAGES OF OXIDATION IN GAAS(100)

Authors
PASSEGGI MCG VAQUILA I FERRON J
Citation
Mcg. Passeggi et al., AUGER-ELECTRON SPECTROSCOPY AND PRINCIPAL COMPONENT ANALYSIS OF THE 1ST STAGES OF OXIDATION IN GAAS(100), Surface and interface analysis, 20(9), 1993, pp. 761-765
Citations number
20
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
20
Issue
9
Year of publication
1993
Pages
761 - 765
Database
ISI
SICI code
0142-2421(1993)20:9<761:ASAPCA>2.0.ZU;2-N
Abstract
The first stages of oxidation in GaAs(100) have been studied using Aug er electron spectroscopy and principal component analysis. We found th at at low oxygen exposures (< 10(4) Langmuirs) and in the presence of excited oxygen produced by electron bombardment, GaAs oxidizes via a o ne-phase process only. This phase involves the simultaneous oxidation of both the elements Ga and As.