STRUCTURAL AND ELECTRICAL STUDY OF [AU INP(100)] AND [AU/INSB/INP(100)] SYSTEMS/

Authors
BIDEUX L GRUZZA B PORTE A ROBERT H
Citation
L. Bideux et al., STRUCTURAL AND ELECTRICAL STUDY OF [AU INP(100)] AND [AU/INSB/INP(100)] SYSTEMS/, Surface and interface analysis, 20(9), 1993, pp. 803-807
Citations number
17
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
20
Issue
9
Year of publication
1993
Pages
803 - 807
Database
ISI
SICI code
0142-2421(1993)20:9<803:SAESO[>2.0.ZU;2-5
Abstract
The mechanisms for the formation of the systems [Au/InP(100)] and [Au/ InSb/InP(200)] are connected with their electrical properties. By usin g quantitative AES, a precise knowledge of the atomic mechanisms allow s us to perform the desired component such as a Schottky diode. The be st results are obtained for the [Au/heated InSb/InP] system with a bar rier height of 0.7 eV.