ELECTRICAL-PROPERTIES OF STRONTIUM-TITANATE THIN-FILMS BY MULTIION-BEAM REACTIVE SPUTTERING TECHNIQUE

Thin films of SrTiO3 were deposited by multi-ion-beam reactive sputter ing technique using SrO and Ti-metal targets. The dielectric behavior of the films deposited on Pt-coated Si substrates showed thickness dep endence. A dielectric constant of 219 at 100 KHz was found for 1.2 mum thick films. A charge storage density of about 15 fC/mum2 and leakage current density of 106 muA/cm2 at an electric field of 0.17 MV/cm wer e obtained for 0.3 mum films. The probable interface layers present be tween film and silicon substrate, in the case of metal-insulator-silic on configuration, appear to influence the electrical behavior. Prelimi nary analysis showed that the conduction of the films in high field re gion was bulk-limited Poole-Frenkel emission mechanisms.