Cj. Peng et al., ELECTRICAL-PROPERTIES OF STRONTIUM-TITANATE THIN-FILMS BY MULTIION-BEAM REACTIVE SPUTTERING TECHNIQUE, Applied physics letters, 63(8), 1993, pp. 1038-1040
Thin films of SrTiO3 were deposited by multi-ion-beam reactive sputter
ing technique using SrO and Ti-metal targets. The dielectric behavior
of the films deposited on Pt-coated Si substrates showed thickness dep
endence. A dielectric constant of 219 at 100 KHz was found for 1.2 mum
thick films. A charge storage density of about 15 fC/mum2 and leakage
current density of 106 muA/cm2 at an electric field of 0.17 MV/cm wer
e obtained for 0.3 mum films. The probable interface layers present be
tween film and silicon substrate, in the case of metal-insulator-silic
on configuration, appear to influence the electrical behavior. Prelimi
nary analysis showed that the conduction of the films in high field re
gion was bulk-limited Poole-Frenkel emission mechanisms.