Rr. Bacsa et al., LOW-TEMPERATURE SYNTHESIS OF BATIO3 THIN-FILMS ON SILICON SUBSTRATES BY HYDROTHERMAL REACTION, Applied physics letters, 63(8), 1993, pp. 1053-1055
Crystalline BaTiO3 thin films (0.2-1 mum) of dielectric constant 450-5
00 have been synthesized by the hydrothermal reaction of a titanium fi
lm (approximately 1 mum thickness) deposited on a silicon substrate wi
th Ba(OH)2 solution (concentration 0.4 M) in the temperature range 100
-200-degrees-C. The reaction of the silicon substrate with the Ti film
was prevented by deposition of a buffer layer of amorphous TiC betwee
n the Ti film and the Si substrate. The TiC not only prevented the dif
fusion of Si through the Ti layer but also allowed some reaction betwe
en itself and the Ti layer so that the adherence of the films was not
degraded.