SB GASB HETEROSTRUCTURES AND MULTILAYERS

We have successfully synthesized heterojunctions and elementary multil ayered structures of the semimetal-semiconductor system Sb/GaSb using molecular beam and migration enhanced epitaxies. The study is motivate d in part by the potential for producing an indirect narrow-gap semico nductor, in which a confinement-induced positive energy gap in the Sb layers will lead to highly attractive properties for nonlinear optical switches operating in the infrared. One may also be able to exploit t he long mean free path in Sb (up to 2 mum) in studying quantum transpo rt phenomena. X-ray diffraction confirms the ordered growth of GaSb/Sb /GaSb multilayers, and field-dependent magnetotransport measurements y ield electron and hole mobilities greater-than-or-equal-to 3 X 10(4) c m2/V s in Sb thin films.