ENHANCEMENT OF ELECTRICAL ACTIVATION OF ION-IMPLANTED PHOSPHORUS IN SI(100) THROUGH 2-STEP THERMAL ANNEALING

We report an improvement of the electrical activation of 50 and 100 ke V ion-implanted P in Si(100) by a two-step anneal process. The two-ste p process, which combines annealing for 30 min at 550-degrees-C with a nnealing for 10 s at 1050-degrees-C, activates nearly 75%-100% of the implanted P. A parallel study shows that one-step annealing for 10 s a .t 1050-degrees-C only activates 40%-60% of the doped P. In the two-st ep process, the low-temperature anneal is for solid state regrowth of implantation-damaged Si, while the high-temperature anneal is for P ac tivation. Our study demonstrates that, to enhance the electrical activ ation, it is important to separate the regrowth process from the activ ation process.