SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH THIN ALPHA-SI EMITTERS

Authors
TANG ZR KAMINS T LI P SALAMA CAT
Citation
Zr. Tang et al., SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH THIN ALPHA-SI EMITTERS, IEEE electron device letters, 14(9), 1993, pp. 438-443
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
9
Year of publication
1993
Pages
438 - 443
Database
ISI
SICI code
0741-3106(1993)14:9<438:SHBWTA>2.0.ZU;2-Q
Abstract
A SiGe-base heterojunction bipolar transistor with an extremely thin n + hydrogenated amorphous Si (alpha-Si:H) emitter is proposed and chara cterized. The structure results in enhanced emitter injection efficien cy, current gain, and frequency performance. The fabricated devices ex hibited maximum current gains of 100 and Early voltages of 55 V. The u nity current gain cutoff frequency (f(T)) for a device with an emitter size of 2 X 4 mum2 was found to be 8.5 GHz.