ROOM-TEMPERATURE OPERATION OF A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR BASED INTEGRATED-CIRCUIT

We demonstrate the first resonant-tunneling hot-electron transistor (R HET) EXCLUSIVE-NOR integrated circuit that operates at room temperatur e. The XNOR circuit, consisting of a single resonant-tunneling transis tor and four thin-film resistors, exhibits a 500-mV output voltage swi ng between the high- and low-logic levels when biased with a 1.8-V sup ply. The transistor, which features a novel InGaP collector barrier, h as a peak current density of 4 X 10(4) angstrom . cm-2, a common-base transfer coefficient of 0.9, and a peak-to-valley current ratio of 10: 1 when operated in a common-emitter mode.