HEAVY-ION-INDUCED DAMAGE OF BINARY SEMICONDUCTORS GAP AND PBS

Authors
KARAMIAN SA BUGROV VN ASCHERON C OTTO G PLATONOV SY YUMINOV OA
Citation
Sa. Karamian et al., HEAVY-ION-INDUCED DAMAGE OF BINARY SEMICONDUCTORS GAP AND PBS, Radiation effects and defects in solids, 126(1-4), 1993, pp. 265-270
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
126
Issue
1-4
Year of publication
1993
Pages
265 - 270
Database
ISI
SICI code
1042-0150(1993)126:1-4<265:HDOBSG>2.0.ZU;2-U