THEORETICAL INVESTIGATION OF DEFECTS INDUCED IN SILICON-CRYSTALS BY HIGH-ENERGY HEAVY-IONS

Authors
ZYMIERSKA D AULEYTNER J
Citation
D. Zymierska et J. Auleytner, THEORETICAL INVESTIGATION OF DEFECTS INDUCED IN SILICON-CRYSTALS BY HIGH-ENERGY HEAVY-IONS, Radiation effects and defects in solids, 126(1-4), 1993, pp. 279-282
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
126
Issue
1-4
Year of publication
1993
Pages
279 - 282
Database
ISI
SICI code
1042-0150(1993)126:1-4<279:TIODII>2.0.ZU;2-V
Abstract
The aim of the present paper was an attempt at explanation of origin o f X-ray diffraction images of extended defects arising from irradiatio n of silicon single crystals by high-energy krypton ions.