ELECTRON-CAPTURE STUDIES FOR HIGHLY-CHARGED BI-IONS

Authors
STOHLKER T MOKLER PH GEISSEL H BERNSTEIN EM COCKE CL KOZHUHAROV C MOSHAMMER R MUNZENBERG G NICKEL F RYMUZA P SCHEIDENBERGER C STACHURA Z ULLRICH J WARCZAK A
Citation
T. Stohlker et al., ELECTRON-CAPTURE STUDIES FOR HIGHLY-CHARGED BI-IONS, Radiation effects and defects in solids, 126(1-4), 1993, pp. 319-323
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
126
Issue
1-4
Year of publication
1993
Pages
319 - 323
Database
ISI
SICI code
1042-0150(1993)126:1-4<319:ESFHB>2.0.ZU;2-6