IN-BEAM MOSSBAUER-SPECTROSCOPY - FE-57 IN SEMICONDUCTORS

Authors
SCHWALBACH P HARTICK M CIANI M DRODT M KANKELEIT E STAHL B WENDE L
Citation
P. Schwalbach et al., IN-BEAM MOSSBAUER-SPECTROSCOPY - FE-57 IN SEMICONDUCTORS, Radiation effects and defects in solids, 126(1-4), 1993, pp. 389-393
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
126
Issue
1-4
Year of publication
1993
Pages
389 - 393
Database
ISI
SICI code
1042-0150(1993)126:1-4<389:IM-FIS>2.0.ZU;2-F
Abstract
An overview of results on microscopic properties, implantation feature s and dynamics Of Fe ions implanted into Si, Ge and ZnS as investigate d with in beam Mossbauer spectroscopy(IBMS) is given. Potential and li mitations of the method are discussed.